IRFL014 Vishay, IRFL014 Datasheet - Page 2

• Manufacturer Part Number: IRFL014
• Description: MOSFET N-CH 60V 2.7A SOT223
• Manufacturer: Vishay

Specifications of IRFL014

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 19 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL014

IRFL014, SiHFL014
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
GS
GS
J
V
R
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
G
J
Reference to 25 °C, I
= 10 V
= 10 V
= 24 Ω, R
= 25 °C, I
MIN.
= 48 V, V
-
-
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TEST CONDITIONS
DS
GS
DS
DS
DD
= V
F
= 0 V, I
= 60 V, V
V
= 25 V, I
= 30 V, I
V
V
= 10 A, dI/dt = 100 A/µs
GS
DS
D
S
GS
GS
GS
I
= 2.7 A, V
= 2.7 Ω, see fig. 10
D
= ± 20 V
, I
= 25 V,
= 0 V, T
= 0 V,
see fig. 6 and 13
= 10 A, V
D
D
D
D
= 250 µA
= 250 µA
GS
I
D
= 1.6 A
= 10 A,
= 1.6 A
= 0 V
D
TYP.
J
GS
= 1 mA
-
-
= 125 °C
DS
G
G
= 0 V
= 48 V,
b
D
S
b
b
b
D
S
b
MIN.
2.0
1.9
MAX.
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
40
Document Number: 91191
S-81369-Rev. A, 07-Jul-08
0.068
TYP.
0.20
300
160
4.0
6.0
29
10
50
13
19
70
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
0.20
0.40
S
250
140
4.0
3.1
5.8
2.7
1.6
25
11
22
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V