IRFL9014 Vishay, IRFL9014 Datasheet
IRFL9014
Specifications of IRFL9014
Available stocks
Related parts for IRFL9014
IRFL9014 Summary of contents
Page 1
... Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 IRFL9014PbF SiHFL9014-E3 IRFL9014 SiHFL9014 = 25 °C, unless otherwise noted ° 100 °C C IRFL9014, SiHFL9014 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL9014TRPbF a SiHFL9014T-E3 a IRFL9014TR a SiHFL9014T SYMBOL LIMIT ...
Page 2
... IRFL9014, SiHFL9014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). ...
Page 3
... A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91195_03 = 25 ° µs Pulse Width T = 150 ° 91195_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL9014, SiHFL9014 Vishay Siliconix MIN. TYP. MAX 1 5 160 b - 0.096 0.19 and ° ...
Page 4
... IRFL9014, SiHFL9014 Vishay Siliconix 600 MHz iss 500 rss oss 400 300 200 100 Drain-to-Source Voltage ( 91195_05 Fig Typical Capacitance vs. Drain-to-Source Voltage -6 - Total Gate Charge (nC) 91195_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 10 91195_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91195 S-81412-Rev. A, 07-Jul-08 100 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 IRFL9014, SiHFL9014 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
Page 6
... IRFL9014, SiHFL9014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 400 300 200 100 100 Starting T , Junction Temperature (°C) 91195_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
Page 7
... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig.14 - For P-Channel IRFL9014, SiHFL9014 Vishay Siliconix + + P. www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...