IRLML2803TRPBF International Rectifier, IRLML2803TRPBF Datasheet

MOSFET N-CH 30V 1.2A SOT-23

IRLML2803TRPBF

Manufacturer Part Number
IRLML2803TRPBF
Description
MOSFET N-CH 30V 1.2A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRLML2803TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 910mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Input Capacitance (ciss) @ Vds
85pF @ 25V
Power - Max
540mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Current, Drain
1.2 A
Gate Charge, Total
3.3 nC
Package Type
Micro3
Polarization
N-Channel
Power Dissipation
540 mW
Resistance, Drain To Source On
0.25 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
9 ns
Time, Turn-on Delay
3.9 ns
Transconductance, Forward
0.87 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
1.2A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
400 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
1.2 A
Mounting Style
SMD/SMT
Gate Charge Qg
3.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML2803PBFTR

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Part Number
Manufacturer
Quantity
Price
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www.irf.com
I
I
I
P
V
E
dv/dt
T
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
D
GS
AS
J ,
θJA
@ T
@ T
T
@T
STG
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
d
GS
GS
@ 10V
@ 10V
f
g
G
Typ.
–––
D
S
-55 to + 150
Micro3
Max.
0.93
540
1.2
7.3
4.3
±20
3.9
5.0
Max.
230
mW/°C
Units
Units
°C/W
V/ns
mW
mJ
°C
A
V
1

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IRLML2803TRPBF Summary of contents

Page 1

Absolute Maximum Ratings 25°C Continuous Drain Current 70°C Continuous Drain Current Pulsed Drain Current ...

Page 2

  ‚ ≤ ≤ ≤ www.irf.com J ƒ ≤ „ ≤ … Limited starting T Jmax ƒ Ω ƒ ƒ Ω Ω, ƒ ƒ ≤ ≤ = 25°C, ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 1 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage ( 25° 150° ...

Page 4

1MHz iss gs gd 140 rss oss ds gd 120 C iss 100 C oss 80 60 ...

Page 5

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors 1000 D = 0.50 100 0.20 0.10 0.05 10 0.02 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms + ƒ • • - • + ‚ ...

Page 7

Dimensions are shown in milimeters (inches " "YÃi iii 8 7 @8PHH@I9@9ÃAPPUQ DIU (&! "Y b"'d ($ b"&$d ( b&$d www.irf.com 6 < 0 HDGGDH@U@ ppp ...

Page 8

Micro3 (SOT-23/TO-236AB) Part Marking Information Q6SUÃIVH7@S Q6SUÃIVH7@SÃ8P9@ÃS@ @S@I8@) 6Ã2ÃDSGHG!#! 7Ã2ÃDSGHG!'" 8Ã2ÃDSGHG%"! 9Ã2ÃDSGHG$ " @Ã2ÃDSGHG%#! Ã2ÃDSGHG%# BÃ2ÃDSGHG!$! CÃ2ÃDSGHG$!" ‚‡r)Ã6ÃyvrÃhi‚‰rÇurЂ…xÐrrx h†Ã†u‚Ãur…rÃvqvph‡r†ÃGrhqÃÃA…rr www.irf.com XÃ2à !%ÃD ÃQS@8@9@9Ã7`ÃG6TUÃ9DBDUÃP Ã86G@I96SÃ`@6S `@6S `Ã2Ã`@6S XÃ2ÃX@@F ! !! !" !# !$ GPU !% 8P9@ !& !' !( !  ...

Page 9

SOT-23 2.05 ( .080 ) 1.95 ( .077 ) TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, ...

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