IRF7421D1TRPBF International Rectifier, IRF7421D1TRPBF Datasheet
IRF7421D1TRPBF
Specifications of IRF7421D1TRPBF
IRF7421D1TRPBF
IRF7421D1TRPBFTR
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IRF7421D1TRPBF Summary of contents
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... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...
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IRF7421D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...
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VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3. Drain-to-Source Voltage (V) DS 100 T = 25° 3.0 3.5 4.0 4 Gate-to-Source Voltage (V) GS ...
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IRF7421D1PbF 2 4.1A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature . 5.8 ...
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1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C rss 200 0 ...
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IRF7421D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteris- tics 150° ...
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SO-8 (Fetky) Package Outline 0.25 [.010 NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: ...
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IRF7421D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...