IRF7807D2TRPBF International Rectifier, IRF7807D2TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7807D2TRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807D2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807D2PBFTR; IRF7807D2TRPBF; IRF7807D2TRPBFTR

100
0.1
10
6
1
Fig. 12 - Typical Forward Voltage Drop
0.0
Tj = 125°C
Tj = 25°C
Forward Voltage Drop - V SD ( V )
0.2
Mosfet, Body Diode & Schottky Diode Characteristics
Characteristics
0.4
0.6
0.8
1.0
1.2
0.001
0.01
100
0.1
10
1
0
Reverse Current Vs. Reverse Voltage
Tj = 150°C
Fig. 13 - Typical Values of
5
100°C
125°C
25°C
75°C
50°C
Reverse Voltage - V R (V)
10
15
20
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25
30