IRF7353D2TRPBF International Rectifier, IRF7353D2TRPBF Datasheet
IRF7353D2TRPBF
Specifications of IRF7353D2TRPBF
IRF7353D2TRPBF
IRF7353D2TRPBFTR
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IRF7353D2TRPBF Summary of contents
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... Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...
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... Schottky Diode Electrical Specifications Parameter V Max. Forward voltage drop FM I Max. Reverse Leakage current rm C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions 30 — — 0V — ...
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Power MOSFET Characteristics 100 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...
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IRF7353D2PbF 0.040 V = 4.5V GS 0.036 0.032 0.028 0.024 V GS 0.020 Drain Current (A) D Fig 5. Typical On-Resistance Vs. Drain Current 1200 1MHz ...
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Power MOSFET Characteristics 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 10 1 www.irf.com 0.01 0 Rectangular Pulse Duration ...
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IRF7353D2PbF Schottky Diode Characteristics 100 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - V Fig Typical Forward Voltage Drop Characteristics 6 100 10 1 0.1 0. 150°C J ...
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SO-8 (Fetky) Package Outline 0.25 [.010 NOT DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994. 2. ...
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IRF7353D2PbF SO-8 (Fetky) Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. ...