IRF7473TRPBF International Rectifier, IRF7473TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7473TRPBF
• Description: MOSFET N-CH 100V 6.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7473TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 3180pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 61 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7473PBFTR; IRF7473TRPBF; IRF7473TRPBFTR

IRF7473PbF
I
AS
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
0.028
0.026
0.024
0.022
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
0
Current Sampling Resistors
.3µF
I
G
V
(BR)DSS
D.U.T.
I
D
and Waveforms
and Waveform
V GS = 10V
I D , Drain Current (A)
+
-
V
DS
20
V
R G
GS
20V
V DS
t p
V
G
Q
I AS
GS
D.U.T
0.01 Ω
L
40
Charge
Q
Q
GD
G
15V
DRIVER
+
-
60
V DD
A
0.035
0.030
0.025
0.020
Fig 13. On-Resistance Vs. Gate Voltage
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
25
6.0
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
8.0
50
Vs. Drain Current
J
10.0
75
I D = 6.9A
12.0
100
www.irf.com
TOP
BOTTOM
14.0
125
°
1.8A
3.3A
4.1A
I D
16.0
150