STD4NK80ZT4 STMicroelectronics, STD4NK80ZT4 Datasheet - Page 5

• Manufacturer Part Number: STD4NK80ZT4
• Description: MOSFET N-CH 800V 3A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.9 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8910-2; STD4NK80ZT4

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
osseq
(BR)DSS
g
t
t
t
increases from 0 to 80% V
I
C
I
C
r(Voff)
DS(on)
C
Q
GS(th)
d(on)
d(off)
Q
GSS
DSS
fs
Q
oss eq.
t
oss
t
t
t
iss
rss
c
gs
gd
r
f
r
(1)
g
(2)
=25°C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
R
(see
V
R
(see
V
V
(see
I
V
V
Tc = 125°C
V
V
V
D
DS
DS
GS
DD
DD
DD
GS
DS
DS
GS
DS
GS
G
G
= 1mA, V
=4.7Ω, V
=4.7Ω, V
=0, V
=400 V, I
=640 V, I
=640V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating,
= ± 20V
= V
= 10V, I
Figure
Figure
Figure
Test conditions
Test conditions
GS
DS
, I
D
GS
18)
16)
19)
D
D
D
=0V to 400V
GS
GS
D
D
= 1.5A
= 3 A
= 50µA
= 1.5 A
= 1.5 A,
= 3 A,
= 0
=10V
=10V
GS
=0
Min.
Min.
800
Electrical characteristics
3
Typ.
Typ.
22.5
11.3
3.75
575
2.9
7.5
4.2
67
13
60
13
12
35
32
18
25
3
oss
Max.
Max.
±
4.5
3.5
when V
50
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
S
5/18