IRF7403 International Rectifier, IRF7403 Datasheet - Page 5

• Manufacturer Part Number: IRF7403
• Description: MOSFET N-CH 30V 8.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7403

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7403

10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
0.0001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Ambient Temperature
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
( C)
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
t
10 V
d(on)
1. Duty factor D =
2. Peak T = P
V
Notes:
GS
1
V
t
r
DS
J
µs
DM
x Z
t / t
1
D.U.T.
thJA
P
2
IRF7403
10
DM
R
t
d(off)
+ T
D
A
t
1
t
f
t
2
+
-
V
DD
100