IRF7455 International Rectifier, IRF7455 Datasheet

MOSFET N-CH 30V 15A 8-SOIC

IRF7455

Manufacturer Part Number
IRF7455
Description
MOSFET N-CH 30V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7455

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 5V
Input Capacitance (ciss) @ Vds
3480pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7455

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7455
Quantity:
10 420
Part Number:
IRF7455PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7455TR
Quantity:
1 873
Part Number:
IRF7455TRPBF
Manufacturer:
International Rectifier
Quantity:
32 277
Part Number:
IRF7455TRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Typical SMPS Topologies
Thermal Resistance
Applications
Benefits
Notes
www.irf.com
Symbol
V
V
I
I
I
P
P
T
R
D
D
DM
DS
GS
D
D
J
@ T
@ T
, T
JA
and Current
High Frequency DC-DC Converters
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Ultra-Low R
Low Charge and Low Gate Impedance to
Fully Characterized Avalanche Voltage
@T
@T
with Synchronous Rectification
Reduce Switching Losses
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
through
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
are on page 8
at 4.5V V
Parameter
Parameter
GS
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
1
2
3
4
T o p V ie w
30V
DSS
HEXFET
8
6
5
7
-55 to + 150
Max.
R
D
D
D
50
A
D
Max.
A
120
± 12
2.5
1.6
0.02
30
15
12
DS(on)
0.0075
®
Power MOSFET
max
IRF7455
SO-8
PD- 93842B
Units
Units
W/°C
°C/W
°C
W
W
V
A
V
15A
I
D
1
4/20/00

Related parts for IRF7455

IRF7455 Summary of contents

Page 1

... Maximum Junction-to-Ambient JA Typical SMPS Topologies Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes through are on page 8 www.irf.com SMPS MOSFET V DSS 30V 10V GS @ 10V GS PD- 93842B IRF7455 ® HEXFET Power MOSFET R max I DS(on) D 0.0075 15A SO-8 Max. Units 30 V ± 12 ...

Page 2

... IRF7455 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM 100 ° 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 15V 0.0 -60 -40 -20 3.2 3.4 Fig 4. Normalized On-Resistance IRF7455 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 2.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 15A ...

Page 4

... IRF7455 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 150 ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7455 D.U. 10V µ d(off ...

Page 6

... IRF7455 0.008 4.5V 0.007 0.006 10V 0.005 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 0 ...

Page 7

... .25 (. SIO 4.5 M -198 TRO L LIN SIO SIO ILLIM ( S TLIN JED TLINE SIO EXCE (.00 6 STRA TE.. 6 SO-8 Part Marking www.irf.com ° 0 .10 (. IRF7455 LIM .0532 .0688 1 . .0040 .0098 0 .10 0 .25 B .014 .018 0 . 075 .0 098 0 .19 0. .80 4.98 E .150 ...

Page 8

... IRF7455 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO DIM E NS ION S ARE SHO ILL IM E TER S (INC & ING SIO ILLIME TER . TLIN IA-48 1 & -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 1.8mH ...

Related keywords