STP11NM60ND STMicroelectronics, STP11NM60ND Datasheet - Page 18

• Manufacturer Part Number: STP11NM60ND
• Description: MOSFET N-CH 600V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP11NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.37ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8442-5

Revision history
6
18/19
Revision history
Table 10.
23-Apr-2008
25-Oct-2010
Date
Document revision history
Revision
1
2
Doc ID 14625 Rev 2
First release
– Corrected
– Corrected
– Corrected
Figure 2: Safe operating area for TO-220, I²PAK
Figure 4: Safe operating area for TO-220FP
Figure 6: Safe operating area for DPAK, IPAK
Changes
STD/F/I/P/U11NM60ND