STW42N65M5 STMicroelectronics, STW42N65M5 Datasheet - Page 4

• Manufacturer Part Number: STW42N65M5
• Description: MOSFET N-CH 650V 33A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW42N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4650pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8796-5

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
C
V
R
(BR)DSS
to 80% V
to 80% V
C
o(er)
I
I
C
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
DS(on
GSS
R
DSS
Q
o(er)
o(tr)
oss
iss
rss
gs
gd
G
g
(2)
(1)
is a constant capacitance value that gives the same charging time as C
is a constant capacitance value that gives the same stored energy as C
DSS
DSS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15317 Rev 3
V
V
V
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
GS
(BR)DSS
GS
(BR)DSS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0, V
= 0, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
DS
DS
, I
20)
GS
D
D
= 0 to 80%
= 0 to 80%
D
= 250 µA
= 16.5 A
= 0
= 16.5 A,
C
=125 °C
Min.
Min.
oss
650
oss
3
-
-
-
-
-
while V
while V
0.070
4650
Typ.
Typ.
110
100
285
100
3.2
1.1
26
38
DS
DS
4
is rising from 0
is rising from 0
STx42N65M5
0.079
Max.
Max.
100
100
1
5
-
-
-
-
-
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
Ω
Ω
V
V