STY60NM60 STMicroelectronics, STY60NM60 Datasheet
STY60NM60
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STY60NM60 Summary of contents
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... ORDERING INFORMATION SALES TYPE STY60NM60 July 2003 N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmesh™Power MOSFET R I DS(on MARKING PACKAGE Y60NM60 Max247 STY60NM60 Max247 INTERNAL SCHEMATIC DIAGRAM PACKAGING TUBE 1/8 ...
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... STY60NM60 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT V Gate source ESD(HBM-C=100pF, R=15K ESD(G-S) Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Storage Temperature ...
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... V GS Test Conditions V = 400 4 (see test circuit, Figure 5) Test Conditions di/dt = 100 A/µ 150° (see test circuit, Figure 5) STY60NM60 Min. Typ. Max. 600 10 = 125°C 100 ± 0.050 0.055 Min. Typ. Max 7300 GS 2000 40 1.8 Min. Typ. Max 178 266 44.5 95 Min ...
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... STY60NM60 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...
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... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STY60NM60 5/8 ...
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... STY60NM60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... Max247 MECHANICAL DATA mm DIM. MIN. TYP. A 4.70 A1 2.20 b 1.00 b1 2.00 b2 3.00 c 0.40 D 19.70 e 5.35 E 15.30 L 14.20 L1 3.70 inch MAX. MIN. TYP. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 STY60NM60 MAX. P025Q 7/8 ...
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... STY60NM60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...