STY80NM60N STMicroelectronics, STY80NM60N Datasheet

MOSFET N-CH 600V 74A MAX247

STY80NM60N

Manufacturer Part Number
STY80NM60N
Description
MOSFET N-CH 600V 74A MAX247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STY80NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
74A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
10100pF @ 50V
Power - Max
447W
Mounting Type
Through Hole
Package / Case
MAX247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
74 A
Power Dissipation
447 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8466-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STY80NM60N
Manufacturer:
ON
Quantity:
20 000
Part Number:
STY80NM60N,80NM60N
Manufacturer:
ST
0
Features
Application
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
February 2009
STY80NM60N
The worldwide best R
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
Type
STY80NM60N
N-channel 600 V, 0.030 Ω , 74 A, MDmesh™ II Power MOSFET
Order code
Device summary
V
T
650 V
DSS
Jmax
@
DS(on)
R
< 0.035 Ω
DS(on)
in Max247
80NM60N
Marking
max
74 A
I
D
Rev 5
Figure 1.
Package
Max247
Internal schematic diagram
Max247
STY80NM60N
1
2
Packaging
3
Tube
Max247
www.st.com
1/12
12

Related parts for STY80NM60N

STY80NM60N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code STY80NM60N February 2009 max I DS(on) D < 0.035 Ω Max247 Figure 1. Marking 80NM60N Rev 5 STY80NM60N Max247 Internal schematic diagram Package Packaging Max247 Tube Max247 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ STY80NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STY80NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1 ...

Page 4

... Parameter Test conditions V = MHz 480 (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain DS STY80NM60N Min. Typ 600 250 µ 0.030 0.035 D Min. Typ 10100 455 480 V 1300 = 74 A, 360 D 85 160 2.0 oss Max. Unit V V/ns 1 µA 100 µ ...

Page 5

... STY80NM60N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STY80NM60N ...

Page 7

... STY80NM60N Figure 8. Gate charge vs gate-source voltage Figure =10V GS V =480V =74A 200 100 Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics HV42900 C(pF) 10000 1000 100 10 1 300 400 Q (nC) g Figure 11. Normalized on resistance vs Figure 13. Normalized BV Electrical characteristics ...

Page 8

... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped inductive load test circuit Figure 19. Switching time waveform STY80NM60N ...

Page 9

... STY80NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Package mechanical data 9/12 ...

Page 10

... Package mechanical data DIM 10/12 Max247 MECHANICAL DATA mm MIN. TYP. MAX. 4.70 5.30 2.20 2.60 1.00 1.40 2.00 2.40 3.00 3.40 0.40 0.80 19.70 20.30 5.35 5.55 15.30 15.90 14.20 15.20 3.70 4.30 STY80NM60N inch MIN. TYP. MAX. P025Q ...

Page 11

... STY80NM60N 5 Revision history Table 9. Document revision history Date 29-Nov-2007 04-Dec-2007 04-Aug-2008 14-Nov-2008 04-Feb-2009 Revision 1 First release 2 Header has been corrected 3 Document status promoted: from preliminary data to datasheet. Figure 13: Normalized BV 4 corrected Figure 7: Static drain-source on resistance 5 Revision history Changes vs temperature has been ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STY80NM60N ...

Related keywords