SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1304BDL-T1-E3
• Description: MOSFET N-CH 30V 900MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1304BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 15V
• Power - Max: 370mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 340 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 900mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 385mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.3V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 850mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1304BDL-T1-E3TR

Document Number: 73480
S–52057—Rev. B, 03–Oct–05
0.6
0.5
0.4
0.3
0.2
0.1
4
3
2
1
0
5
4
3
2
1
0
0.0
0.0
0
I
D
= 0.91 A
0.5
On-Resistance vs. Drain Current
V
V
1
GS
Q
DS
0.5
g
= 2.5 V
Output Characteristics
– Total Gate Charge (nC)
– Drain-to-Source Voltage (V)
I
1.0
D
Q
– Drain Current (A)
g
–Gate Charge
2
V
DS
V
GS
1.0
1.5
= 15 V
= 4.5 V
V
GS
3
= 3 thru 5 V
2.0
V
DS
1.5
V
V
V
= 24 V
GS
GS
GS
4
2.5
_
= 2.0 V
= 1.5 V
= 2.5 V
2.0
3.0
5
New Product
180.0
150.0
120.0
90.0
60.0
30.0
0.0
2.0
1.7
1.4
1.1
0.8
0.5
2.0
1.5
1.0
0.5
0.0
–50
0.0
0.0
Transfer Characteristics curves vs. Temp
On-Resistance vs. Junction Temperature
I
D
–25
= 0.90 A
5.0
0.5
V
V
GS
T
C
DS
J
0
rss
– Junction Temperature (_C)
T
– Gate-to-Source Voltage (V)
– Drain-Source Voltage (V)
A
10.0
= 125_C
Capacitance
25
1.0
C
V
Vishay Siliconix
T
oss
GS
A
15.0
T
= 25_C
50
= 4.5 V, I
A
V
= –55_C
GS
Si1304BDL
C
1.5
iss
= 2.5 V, I
75
20.0
D
= 0.9 A
100
www.vishay.com
D
2.0
= 0.75 A
25.0
125
30.0
150
2.5
3