STD17NF03LT4 STMicroelectronics, STD17NF03LT4 Datasheet

MOSFET N-CH 30V 17A DPAK

STD17NF03LT4

Manufacturer Part Number
STD17NF03LT4
Description
MOSFET N-CH 30V 17A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD17NF03LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
6.5nC @ 5V
Input Capacitance (ciss) @ Vds
320pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.038 Ohms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
17 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3155-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD17NF03LT4
Manufacturer:
ST
0
Part Number:
STD17NF03LT4
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD17NF03LT4
Quantity:
5 000
Part Number:
STD17NF03LT4-E
Manufacturer:
SANSUNG
Quantity:
1 041
Part Number:
STD17NF03LT4-E
Manufacturer:
ST
0
Part Number:
STD17NF03LT4G
Manufacturer:
ST
0
Part Number:
STD17NF03LT4SH1
Manufacturer:
ST
0
Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
STD17NF03L-1
STD17NF03L
Exceptional dv/dt capability
Low gate charge at 100°C
Application oriented characterization
100% avalanche tested
Switching application
Type
STD17NF03LT4
STD17NF03L-1
Part number
V
30V
30V
DSS
R
<0.05Ω
<0.05Ω
DS(on)
D17NF03L@
D17NF03L@
N-channel 30V - 0.038Ω - 17A - DPAK/IPAK
Marking
17A
17A
I
D
Rev 4
Internal schematic diagram
STripFET™ II Power MOSFET
Package
DPAK
IPAK
iPAK
STD17NF03L-1
1
2
3
STD17NF03L
Tape & reel
Packaging
DPAK
Tube
1
3
www.st.com
1/14
14

Related parts for STD17NF03LT4

STD17NF03LT4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STD17NF03L-1 STD17NF03LT4 February 2007 N-channel 30V - 0.038Ω - 17A - DPAK/IPAK STripFET™ II Power MOSFET R I DS(on) D <0.05Ω 17A < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD17NF03L - STD17NF03L-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD17NF03L - STD17NF03L-1 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/14 STD17NF03L - STD17NF03L-1 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

STD17NF03L - STD17NF03L-1 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/14 STD17NF03L - STD17NF03L-1 Figure 14. Gate charge test ...

Page 9

STD17NF03L - STD17NF03L-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 10

Package mechanical data DIM 10/14 TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 ...

Page 11

STD17NF03L - STD17NF03L-1 DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 ...

Page 12

Packing mechanical data 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

Page 13

STD17NF03L - STD17NF03L-1 6 Revision history Table 6. Revision history Date 19-Oct-2004 20-Nov-2004 03-Jul-2006 19-Feb-2007 Revision 1 First release 2 Modified value in title 3 New template, no content change 4 Typo mistake on page 1 Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords