FDB035AN06A0 Fairchild Semiconductor, FDB035AN06A0 Datasheet - Page 2

• Manufacturer Part Number: FDB035AN06A0
• Description: MOSFET N-CH 60V 80A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB035AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB035AN06A0; FDB035AN06A0TR

©2010 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
I
Q
B
I
V
r
C
C
C
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDB035AN06A0
J
= 25°C, L = 0.255mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
FDB035AN06A0
Parameter
= 70A.
Device
(V
GS
= 10V)
T
C
= 25°C unless otherwise noted
TO-263AB
Package
V
I
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
GS
GS
J
GS
GS
DS
GS
DS
DD
GS
= 250 A, V
= 80A, V
= 40A, V
= 80A, V
= 175
= 80A
= 40A
= 75A, dI
= 75A, dI
= 0V
= 20V
= 0V to 10V
= 0V to 2V
= 50V
= V
= 25V, V
= 30V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 80A
= 250 A
= 10V
= 6V
= 10V,
/dt = 100A/ s
/dt = 100A/ s
Reel Size
= 0V,
= 0V
= 2.4
330mm
T
V
I
I
D
g
C
DD
= 1.0mA
= 80A
= 150
= 30V
o
C
Tape Width
Min
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
0.0032 0.0035
0.0044 0.0066
0.0065 0.0071
6400
1123
367
Typ
95
12
30
18
24
15
93
38
13
-
-
-
-
-
-
-
-
-
-
-
1.25
Max
250
124
163
100
1.0
15
75
38
39
Quantity
800 units
1
4
-
-
-
-
-
-
-
-
-
-
-
FDB035AN06A0 Rev. A2
Units
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A