IXTP152N085T IXYS, IXTP152N085T Datasheet - Page 5

• Manufacturer Part Number: IXTP152N085T
• Description: MOSFET N-CH 85V 152A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP152N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 152A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 100 s
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 152 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 152
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
110
100
46
45
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42
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40
39
90
80
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60
50
40
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10
60
55
50
45
40
35
30
25
20
15
10
24
4
25
t
T
V
t
R
V
r
J
DS
Switching Times vs. Gate Resistance
f
= 125ºC, V
Switching Times vs. Drain Current
G
DS
6
35
= 43V
= 5 Ω , V
28
I
= 43V
Rise Time vs. Junction Temperature
D
= 25A
I
Fig. 17. Resistive Turn-off
D
Fig. 15. Resistive Turn-on
45
t
= 25A
d(on)
8
t
d(off)
GS
Fig. 13. Resistive Turn-on
GS
32
= 10V
- - - -
- - - -
= 10V
I
T
55
I
D
10
R
J
D
- Amperes
- Degrees Centigrade
G
= 50A
- Ohms
36
65
I
D
12
= 50A
75
40
14
85
T
16
T
T
T
J
44
J
J
J
= 125ºC
= 25ºC
= 125ºC
95
= 25ºC
R
V
V
18
G
GS
DS
105
= 5 Ω
48
= 43V
= 10V
20
115
43
41
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37
35
33
31
29
27
25
23
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75
70
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60
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50
45
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100
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55
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45
40
35
30
25
20
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10
90
80
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50
40
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4
Switching Times vs. Junction Temperature
t
R
V
f
Switching Times vs. Gate Resistance
26
G
DS
35
R
V
V
= 5 Ω , V
G
GS
DS
= 43V
6
= 5 Ω
28
= 10V
= 43V
45
Fig. 18. Resistive Turn-off
t
Fig. 16. Resistive Turn-off
d(off)
T
I
GS
30
D
8
J
Rise Time vs. Drain Current
= 25A
- Degrees Centigrade
55
Fig. 14. Resistive Turn-on
- - - -
= 10V
32
R
10
65
G
I
D
34
- Ohms
- Amperes
I
12
75
D
36
= 25A
t
T
V
f
J
DS
= 125ºC, V
85
38
= 43V
14
T
T
J
J
IXTP152N085T
IXYS REF: T_152N085T (4V) 6-12-06.xls
IXTA152N085T
= 25ºC
= 125ºC
40
I
95
D
t
d(off)
16
= 50A
GS
42
105
- - - -
= 10V
I
18
44
D
115
= 50A
46
20
125
220
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60
40
20
48
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