IXFK73N30 IXYS, IXFK73N30 Datasheet

MOSFET N-CH 300V 73A TO-264AA

IXFK73N30

Manufacturer Part Number
IXFK73N30
Description
MOSFET N-CH 300V 73A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFK73N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Forward Transconductance Gfs (max / Min)
50 s
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
73 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
73
Rds(on), Max, Tj=25°c, (?)
0.045
Ciss, Typ, (pf)
9000
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFK73N30
Manufacturer:
IXYS
Quantity:
200
Part Number:
IXFK73N30Q
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
ISOL
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
Test Conditions
S
ISOL
J
J
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
DM
TM
GS
D
D
DC
D
DSS
G
DS
D25
GS
DD
J
J
J
DSS
JM
Maximum Ratings
IXFK
min.
Characteristic Values
IXFK 73 N 30
IXFN 73 N 30
typ.
IXFN
max.
300 V
300 V
t
TO-264 AA (IXFK)
TO-264 AA (IXFK)
TO-264 AA (IXFK)
TO-264 AA (IXFK)
TO-264 AA (IXFK)
Features
l
l
l
l
l
l
l
l
Applications
l
l
l
l
l
l
l
Advantages
l
l
l
miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
V
rr
DSS
200 ns
DS (on)
E153432
E153432
E153432
E153432
E153432
G
73 A
73 A
D
I
D25
S
G
TM
92805J (11/01)
45 m
45 m
S
R
DS(on)
D
(TAB)
S

Related parts for IXFK73N30

IXFK73N30 Summary of contents

Page 1

... V ISOL ISOL M d Weight Symbol Test Conditions V DSS GS(th GSS DSS DS DSS GS R DS(on D25 © 2001 IXYS All rights reserved IXFK IXFN Maximum Ratings IXFK IXFN DSS Characteristic Values J min. typ. max DSS D25 DS(on) 300 300 200 ns rr TO-264 AA (IXFK) ...

Page 2

... R thJC R thCK Source-Drain Diode Symbol Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values J min. typ. max. DSS D D25 DSS D D25 Characteristic Values J min. typ. max IXFK 73N30 IXFN 73N30 TO-264 AA Outline Dim. Millimeter Inches Min ...

Page 3

... V = 10V GS 1.4 1.2 1.0 0 120 I - Amperes D Fig. 5 Drain Current vs. Case Temperature -50 - Degrees C C © 2001 IXYS All rights reserved 160 8V 7V 140 120 100 2.50 2.25 2.00 1.75 1. 15V 1.25 GS 1.00 0.75 0.50 160 200 240 1.2 1.1 1.0 0.9 0.8 ...

Page 4

... 0.0 0.2 0.4 0.6 0.8 1 Volts SD Fig.10 Transient Thermal Impedance 0.1 0.01 0.001 IXYS reserves the right to change limits, test conditions, and dimensions. Fig.8 Capacitance Curves 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1.2 1.4 1.6 ...

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