FDB8447L Fairchild Semiconductor, FDB8447L Datasheet
FDB8447L
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FDB8447L Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDB8447L FDB8447L ©2007 Fairchild Semiconductor Corporation FDB8447L Rev.C ® MOSFET General Description = 14A This N-Channel MOSFET has been produced using Fairchild D Semiconductor’s proprietary PowerTrench = 11A D deliver low r superior performance benefit in the application ...
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... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting T = 25° 1mH 17.5A FDB8447L Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25°C ...
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... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 100 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDB8447L Rev 25°C unless otherwise noted J µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 - 0.001 ...
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... TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 300 100 10 1 SINGLE PULSE OPERATION IN THIS MAX RATED AREA MAY BE LIMITED DS(on) 0.1 0 DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDB8447L Rev 25°C unless otherwise noted J 3000 V = 10V DD 1000 V = 30V DD 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. FDB8447L Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 10 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...