SI1012R-T1-GE3 Vishay, SI1012R-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1012R-T1-GE3
• Description: MOSFET N-CH 20V 500MA SC-75A
• Manufacturer: Vishay

Specifications of SI1012R-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 6V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1012R-T1-GE3TR

TYPICAL CHARACTERISTICS (T
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
4.0
3.2
2.4
1.6
0.8
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
DS
= 250 mA
0.5
On-Resistance vs. Drain Current
= 10 V
200
V
0.2
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (mA)
400
V
GS
0.4
1.5
= 1.8 V
V
600
GS
= 5 V thru 1.8 V
2.0
A
= 25 °C, unless otherwise noted)
0.6
V
V
GS
800
GS
2.5
= 2.5 V
= 4.5 V
1 V
1000
0.8
3.0
1200
1000
1.60
1.40
1.20
1.00
0.80
0.60
800
600
400
200
100
80
60
40
20
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
0.5
4
V
Transfer Characteristics
T
GS
V
C
J
DS
C
oss
- Junction Temperature (°C)
0
- Gate-to-Source Voltage (V)
iss
- Drain-to-Source Voltage (V)
Capacitance
1.0
8
25
T
C
25 °C
Vishay Siliconix
= - 55 °C
V
I
D
GS
50
= 600 mA
1.5
12
Si1012R/X
= 4.5 V
75
www.vishay.com
125 °C
V
I
D
GS
= 350 mA
2.0
16
= 1.8 V
100
125
2.5
20
3