SI1012R-T1-E3 Vishay, SI1012R-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1012R-T1-E3
• Description: MOSFET N-CH 20V 500MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1012R-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.25ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1012R-T1-E3TR

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71166.
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
10
Single Pulse
- 3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10
- 3
A
= 25 °C, unless otherwise noted)
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 2
10
- 1
10
1
- 1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
Si1012R/X
thJA
100
t
t
1
2
(t)
= 833 ° C/W
www.vishay.com
6
0
1
0
0
5