FDD2572 Fairchild Semiconductor, FDD2572 Datasheet

MOSFET N-CH 150V 29A D-PAK

FDD2572

Manufacturer Part Number
FDD2572
Description
MOSFET N-CH 150V 29A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD2572

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
54 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.054 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
135000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD2572
FDD2572TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD2572
0
Part Number:
FDD2572-F085
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDD2572-F085
Quantity:
25 000
©2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572
N-Channel PowerTrench
150V, 29A, 54m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82860
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
R
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 26nC (Typ.), V
STG
SOURCE
GATE
RR
= 45m (Typ.), V
Body Diode
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
TO-252AA
FDD SERIES
GS
(FLANGE)
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
DRAIN
amb
C
C
= 10V
= 10V, I
= 25
= 100
o
C
= 25
o
C, V
o
o
C, V
D
C, V
®
= 9A
GS
GS
MOSFET
GS
= 10V)
Parameter
= 10V)
T
= 10V, R
C
= 25°C unless otherwise noted
(FLANGE)
DRAIN
certification.
JA
= 52
o
C/W)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
TO-251AA
FDU SERIES
2
copper pad area
SOURCE
DRAIN
GATE
-55 to 175
Ratings
Figure 4
1.11
150
135
100
0.9
29
20
36
52
20
4
G
September 2002
FDD2572 / FDU2572 Rev. B
D
S
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
C
o
C

Related parts for FDD2572

FDD2572 Summary of contents

Page 1

... SOURCE DRAIN (FLANGE) TO-251AA FDU SERIES T = 25°C unless otherwise noted C Parameter 10V 10V 10V C/ copper pad area certification. September 2002 D DRAIN GATE G S Ratings 150 Figure 4 36 135 0.9 -55 to 175 1.11 100 52 FDD2572 / FDU2572 Rev. B Units C/W o C/W o C/W ...

Page 2

... 75V 1.0mA 10V 75V 10V 11 9A, dI /dt =100A 9A, dI /dt =100A Tape Width Quantity 16mm 2500 units N/A 75 units Min Typ Max Units 150 - - 250 - - 100 0.045 0.054 - 0.050 0.075 0.126 0.146 - 1770 - pF - 183 - 3 169 nC FDD2572 / FDU2572 Rev. B ...

Page 3

... Figure 2. Maximum Continuous Drain Current vs SINGLE PULSE - RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability = 10V 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD2572 / FDU2572 Rev. B 175 ...

Page 4

... Resistance vs Junction Temperature o STARTING STARTING T = 150 (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD 0.01 0 TIME IN AVALANCHE (ms) AV Capability 10V = PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD2572 / FDU2572 Rev =9A D 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS 150 0 Figure 14. Gate Charge Waveforms for Constant = 250 120 160 JUNCTION TEMPERATURE ( 75V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g Gate Currents FDD2572 / FDU2572 Rev. B 200 30 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms DUT g(TH g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT 10V GS Q gs2 OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD2572 / FDU2572 Rev 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD2572 / FDU2572 Rev. B ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD2572 rev April 2002 5.5e- 7.4e-10 Cin 6 8 1.7e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 160 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 1.21e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 4.45e-9 RLgate 1 9 12.1 RLdrain RLsource ...

Page 9

... RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDD2572 / FDU2572 Rev ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD2572 / FDU2572 Rev. B ...

Page 11

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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