FQP6N80 Fairchild Semiconductor, FQP6N80 Datasheet - Page 3

• Manufacturer Part Number: FQP6N80
• Description: MOSFET N-CH 800V 5.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.95ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.95 Ohms
• Forward Transconductance Gfs (max / Min): 5.9 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
2000
1800
1600
1400
1200
1000
10
10
10
800
600
400
200
-1
1
0
4
3
2
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
4
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
10
, Drain Current [A]
0
0
V
GS
= 20V
C
C
8
C
iss
rss
oss
V
GS
= 10V
C
C
C
iss
oss
rss
= C
※ Notes :
= C
= C
10
1. 250μ s Pulse Test
2. T
10
12
gs
※ Note : T
ds
gd
1
1
+ C
+ C
C
= 25℃
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
= shorted)
= 25℃
= 0 V
16
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
5
0.4
25
150℃
4
o
150
C
V
V
10
Q
and Temperature
GS
SD
o
G
C
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
V
0.6
V
DS
DS
DS
15
= 640V
= 400V
= 160V
25℃
6
-55
20
0.8
o
C
※ Notes :
25
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
1.0
= 0V
D
30
= 5.8A
Rev. A, September 2000
1.2
10
35