SI7135DP-T1-GE3 Vishay, SI7135DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7135DP-T1-GE3
• Description: MOSFET P-CH 30V 60A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7135DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 8650pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.6 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 6.2mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7135DP-T1-GE3TR

Si7135DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
0.01
100
0.8
0.6
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
Limited by R
D
75
= 250 µA
0.8
T
J
= - 50 °C
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
DS(on)
1.0
I
Safe Operating Area, Junction-to-Ambient
D
* V
Single Pulse
125
= 1 mA
T
GS
A
*
= 25 °C
New Product
> minimum V
1.2
V
150
DS
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
0.025
0.020
0.015
0.010
0.005
0.000
DS(on)
10
200
160
120
80
40
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
100 µs
1 ms
1 s
10 s
100 s, DC
10 ms
100 ms
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-81588-Rev. A, 07-Jul-08
Document Number: 68807
6
7
T
1
T
J
J
= 125 °C
8
= 25 °C
9
1
10
0