IRF520 Vishay, IRF520 Datasheet

MOSFET N-CH 100V 9.2A TO-220AB

IRF520

Manufacturer Part Number
IRF520
Description
MOSFET N-CH 100V 9.2A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF520

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.2 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF520
IRF520IR

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91017
S-81240-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 9.2 A, dI/dt ≤ 110 A/µs, V
= 25 V, starting T
(Ω)
TO-220
G
a
D
J
S
= 25 °C, L = 3.5 mH, R
c
a
a
b
V
DD
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
100
≤ 175 °C.
4.4
7.7
16
G
= 25 Ω, I
D
S
C
Power MOSFET
0.27
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 9.2 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF520PbF
SiHF520-E3
IRF520
SiHF520
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
- 55 to + 175
IRF520, SiHF520
LIMIT
300
± 20
0.40
100
200
9.2
6.5
9.2
6.0
5.5
1.1
37
60
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF520 Summary of contents

Page 1

... TO-220 IRF520PbF SiHF520-E3 IRF520 SiHF520 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 9.2 A (see fig. 12 ≤ 175 ° IRF520, SiHF520 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 9 6 0.40 E 200 ...

Page 2

... IRF520, SiHF520 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... 91017_03 = 25 °C C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 20 µs Pulse Width T = 175 ° 91017_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF520, SiHF520 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I = 9.2 A ...

Page 4

... IRF520, SiHF520 Vishay Siliconix 750 MHz iss 600 rss oss ds 450 300 150 Drain-to-Source Voltage ( 91017_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 9 Total Gate Charge (nC) 91017_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 C oss C rss 10 1 91017_07 For test circuit see figure 13 0 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91017 S-81240-Rev. A, 16-Jun-08 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF520, SiHF520 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF520, SiHF520 Vishay Siliconix 91017_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 Top 500 Bottom 400 300 200 100 100 125 150 Starting T , Junction Temperature (° 3.8 A 6.5 A 9.2 A 175 Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF520, SiHF520 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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