IRF720 Vishay, IRF720 Datasheet - Page 4

• Manufacturer Part Number: IRF720
• Description: MOSFET N-CH 400V 3.3A TO-220AB
• Manufacturer: Vishay

Specifications of IRF720

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF720

IRF720, SiHF720
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91043_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91043_06
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= 3.3 A
V
DS ,
5
Q
Drain-to-Source Voltage (V)
G
V
, Total Gate Charge (nC)
DS
= 80 V
V
10
V
C
C
C
C
DS
C
C
GS
iss
rss
oss
oss
iss
rss
= 200 V
= C
= 0 V, f = 1 MHz
= C
= C
V
10
gs
gd
ds
DS
15
+ C
1
+ C
= 320 V
gd
gd
This datasheet is subject to change without notice.
, C
For test circuit
see figure 13
ds
20
Shorted
25
91043_07
91043_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-2
-1
0
1
2
1
5
2
5
2
5
2
5
2
0.4
0.1
150
Fig. 8 - Maximum Safe Operating Area
2
°
V
V
C
SD
0.6
DS
5
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
2
T
T
Single Pulse
0.8
C
J
by R
= 150 °C
5
= 25 °C
25
10
DS(on)
S11-0508-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
°
C
Document Number: 91043
1.0
2
5
10
1.2
2
V
GS
2
= 0 V
1
10
100
10
5
ms
10
1.4
µs
ms
µs
3