BSN20,235 NXP Semiconductors, BSN20,235 Datasheet - Page 10

• Manufacturer Part Number: BSN20,235
• Description: MOSFET N-CH 50V 173MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSN20,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 173mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934012500235; BSN20 /T3; BSN20 /T3

10. Revision history
Table 6:
Philips Semiconductors
9397 750 07213
Product specification
Rev Date
03
02
01
20000626
19970618
19901031
Revision history
CPCN
HZG303
-
-
Description
Product specification; third version; supersedes BSN20_2 of 970618.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; second version.
Product specification; initial version.
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
BSN20
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