IRF8714GPBF International Rectifier, IRF8714GPBF Datasheet - Page 7

• Manufacturer Part Number: IRF8714GPBF
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8714GPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 18a. Switching Time Test Circuit
‚
+
R
-
R
V
V
D.U.T
≤ 0.1 %
V
≤ 1
ƒ
Fig 17.
+
-
•
•
•
•
SD
D.U.T.
•
•
•
R
-
„
G
HEXFET
+
+
- V
V
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
V
90%
10%
V
Fig 18b. Switching Time Waveforms
DS
GS
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
= 5V for Logic Level Devices
DS
t
d(on)
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
t
Body Diode Forward
r
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
t
d(off)
Period
P.W.
t
f
V
V
I
SD
GS
DD
=10V
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