STD60NF3LLT4 STMicroelectronics, STD60NF3LLT4 Datasheet - Page 3

• Manufacturer Part Number: STD60NF3LLT4
• Description: MOSFET N-CH 30V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60NF3LLT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 60 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2476-2

STD60NF3LL
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. Starting Tj=25°C, I
Table 2.
Rthj-case
Rthj-amb
Symbol
E
V
I
DM
V
V
T
T
P
AS
DGR
I
I
T
DS
GS
stg
J
D
D
tot
j
(1)
(2)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-to ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
=30A, V
DD
=27.5V
Parameter
C
GS
= 25°C
GS
= 20 kΩ)
= 0)
C
C
= 25°C
= 100°C
-55 to 175
Value
± 16
0.67
240
100
700
30
30
60
43
Electrical ratings
100
300
1.5
W/°C
Unit
mJ
°C
W
V
V
V
A
A
A
°C/W
°C/W
°C
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