STP16NF06L STMicroelectronics, STP16NF06L Datasheet

MOSFET N-CH 60V 16A TO-220

STP16NF06L

Manufacturer Part Number
STP16NF06L
Description
MOSFET N-CH 60V 16A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STP16NF06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
345pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
16 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
16A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.09Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2765-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP16NF06L
Manufacturer:
ST
Quantity:
30 000
Part Number:
STP16NF06L
Manufacturer:
ST
0
Part Number:
STP16NF06L
Manufacturer:
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Quantity:
256
Part Number:
STP16NF06L,P16NF06L
Manufacturer:
ST
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Part Number:
STP16NF06LFP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP16NF06LFP
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( •) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
March 2004
.
STP16NF06L
STP60NF06LFP
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100
LOW THRESHOLD DRIVE
MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
Symbol
dv/dt
E
I
V
DM
V
V
V
P
AS (2)
T
DGR
I
I
T
ISO
GS
stg
DS
TYPE
D
D
tot
( •)
j
therefore
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.07 Ω
a
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP
V
60 V
60 V
DSS
remarkable
Parameter
<0.09 Ω
<0.09 Ω
R
DS(on)
C
GS
o
= 25°C
C
GS
= 20 k Ω )
manufacturing
= 0)
C
C
16 A
11 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
STP16NF06L
SD
--------
≤ 16A, di/dt ≤ 210A/µs, V
0.3
16
11
64
45
j
TO-220
= 25
-55 to 175
o
Value
C, I
± 16
127
STP16NF06LFP
60
60
23
1
D
= 8A, V
2
STP16NF06LFP
3
STP16NF06L
DD
DD
7.5(*)
44(*)
2500
11(*)
0.17
≤ V
25
= 30V
(BR)DSS
TO-220FP
, T
j
≤ T
JMAX.
1
W/°C
2
V/ns
Unit
mJ
°C
W
3
V
V
V
A
A
A
V
1/9

Related parts for STP16NF06L

STP16NF06L Summary of contents

Page 1

... manufacturing INTERNAL SCHEMATIC DIAGRAM STP16NF06L = Ω 25° 100° 25°C C -------- ≤ 16A, di/dt ≤ 210A/µ (2) Starting T STP16NF06L STP16NF06LFP TO-220 TO-220FP Value STP16NF06LFP 60 60 ± 11(*) 11 7.5(*) 64 44(*) 45 25 0.3 0.17 23 127 2500 -55 to 175 ≤ (BR)DSS 8A 30V ...

Page 2

... STP16NF06L/FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (1) ON Symbol Parameter V Gate Threshold Voltage ...

Page 3

... Test Conditions 4.7 Ω 4 (Resistive Load, Figure 3) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 5) Safe Operating Area for TO-220FP STP16NF06L/FP Min. Typ. Max. Unit 7 2.1 nC 3.1 nC Min. Typ. Max. Unit 20 ns 12.5 ns Min. Typ. Max. Unit 1.3 ...

Page 4

... STP16NF06L/FP Thermal Impedance Output Characteristics Transconductance 4/9 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized on Resistance vs Temperature STP16NF06L/FP 5/9 ...

Page 6

... STP16NF06L/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP16NF06L/FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 ...

Page 8

... STP16NF06L/FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 ...

Page 9

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES www.st.com STP16NF06L/FP 9/9 ...

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