IRLB3036GPBF International Rectifier, IRLB3036GPBF Datasheet
IRLB3036GPBF
Specifications of IRLB3036GPBF
Related parts for IRLB3036GPBF
IRLB3036GPBF Summary of contents
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... GS @ 10V (Package Limited Parameter j IRLB3036GPbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited (Package Limited) TO-220AB IRLB3036GPbF G D Drain Max. c 270 c 190 195 1100 380 2.5 ±16 8.0 - 175 300 x x 10lb in (1.1N m) 290 See Fig. 14, 15, 22a, 22b Typ ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° ...
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175°C 100 25° 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 300 Limited By Package 250 200 150 100 50 0 ...
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D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed avalanche ...
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250µ 1.0mA 1 1.0A 1.0 0.5 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig 16. Threshold ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...
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TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for ...