IRLS3034-7PPBF International Rectifier, IRLS3034-7PPBF Datasheet - Page 4

• Manufacturer Part Number: IRLS3034-7PPBF
• Description: MOSFET N-CH 40V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLS3034-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10990pF @ 40V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 380 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Fig 9. Maximum Drain Current vs. Case Temperature
1000
100
400
300
200
100
2.5
2.0
1.5
1.0
0.5
0.0
1.0
10
Fig 11. Typical C
0
Fig 7. Typical Source-Drain Diode
0.0
25
-5
T J = 175°C
0
0.5
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
50
5
Forward Voltage
T C , Case Temperature (°C)
T J = 25°C
1.0
10 15 20 25 30 35 40 45
75
OSS
1.5
100
Limited By Package
Stored Energy
2.0
125
2.5
V GS = 0V
150
3.0
175
3.5
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1200
1000
1000
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
800
600
400
200
100
50
48
46
44
42
40
10
0
1
-60 -40 -20 0 20 40 60 80 100120140160180
25
0
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Limited by package
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
1
100
1msec
DC
10msec
TOP
BOTTOM 220A
125
10
100µsec
150
I D
94A
47A
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175
100