IXTK550N055T2 IXYS, IXTK550N055T2 Datasheet - Page 6

• Manufacturer Part Number: IXTK550N055T2
• Description: MOSFET N-CH 55V 550A TO-264
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™r
• Type: TrenchT2 GigaMOSr

Specifications of IXTK550N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 550A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 595nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Product: MOSFET Gate Drivers
• Rise Time: 40 ns
• Fall Time: 230 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 1250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 90 ns
• Maximum Turn-on Delay Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 550 A
• Output Voltage: 55 V
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 550
• Rds(on), Max, Tj=25°c, (?): 0.0016
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 595
• Trr, Typ, (ns): 100
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTK550N055T2
IXTX550N055T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.300
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:T_550N055T2(V9)12-07-09