IXFK170N20P IXYS, IXFK170N20P Datasheet

MOSFET N-CH 200V 170A TO-264

IXFK170N20P

Manufacturer Part Number
IXFK170N20P
Description
MOSFET N-CH 200V 170A TO-264
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFK170N20P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
11400pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
TO-264
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
170
Rds(on), Max, Tj=25°c, (?)
0.014
Ciss, Typ, (pf)
11.4
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.12
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
HiperFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
Leads Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Mounting torque
PLUS247
TO-264
V
V
V
V
V
V
Test Conditions
S
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
TM
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
(PLUS247)
(TO-264)
D25
J
GS
≤ 175°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
JM
= 150°C
IXFK170N20P
IXFX170N20P
20..120/4.5..27
-55 ... +175
-55 ... +175
Characteristic Values
Maximum Ratings
200
Min.
3.0
1.13/10
1250
200
200
±20
±30
170
400
175
300
260
75
85
20
10
Typ.
4
6
±200 nA
Nm/lb.in.
Max.
14 mΩ
5.0
50 μA
1 mA
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXFK)
G = Gate
S = Source
Features
• Fast intrinsic diode
• Avalanche Rated
• Low R
• Low package inductance
Advantages
• Low gate charge results in simple
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
PLUS247 (IXFX)
D25
drive requirement
power supplies
applications
DS(on)
DSS
DS(ON)
G
≤ ≤ ≤ ≤ ≤
=
=
D
and Q
S
D
TAB = Drain
14mΩ Ω Ω Ω Ω
200V
170A
G
= Drain
DS100008(7/08)
(TAB)
(TAB)

Related parts for IXFK170N20P

IXFK170N20P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFK170N20P IXFX170N20P Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 170 75 400 ≤ 175° 1250 -55 ... +175 175 -55 ... +175 300 260 20..120/4.5..27 1.13/10 ...

Page 2

... I = 0.5 • DSS D D25 60 0.15 Characteristic Values Min. Typ. JM 1.6 20 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK170N20P IXFX170N20P TO-264 (IXFK) Outline Max 0.12 °C/W °C/W Max. 170 A 510 A PLUS 247 (IXFX) Outline TM 1.3 V 200 ns μ ...

Page 3

... Normalized to I DS(on) vs. Junction Temperature 3 10V GS 3.0 2.6 I 2.2 D 1.8 1.4 1.0 0.6 0.2 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXFK170N20P IXFX170N20P 85A Value D = 170A I = 85A D 100 125 150 175 100 125 150 175 ...

Page 4

... T = 25º 1.0 1.1 1.2 1.3 1.4 1.5 1,000.0 C iss 100.0 C oss 10.0 1.0 C rss 0 IXFK170N20P IXFX170N20P Fig. 8. Transconductance 40º 100 120 I - Amperes D Fig. 10. Gate Charge V = 100V 85A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFK170N20P IXFX170N20P 0.1 1 IXYS REF: T_170N20P(93)7-16-08 10 ...

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