BSS138N L6327 Infineon Technologies, BSS138N L6327 Datasheet
BSS138N L6327
Specifications of BSS138N L6327
BSS138NL6327INTR
BSS138NL6327XT
SP000074207
Related parts for BSS138N L6327
BSS138N L6327 Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package Ordering Code BSS138N PG-SOT-23 Q67042-S4184 BSS138N PG-SOT-23 Q67045-A5069 BSS138N PG-SOT-23 Q67042-S4190 Maximum ratings =25 °C, ...
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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.5 Symbol Conditions R thJA =25 °C, unless ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 [° Safe operating area I =f =25 ° parameter limited ...
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Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ...
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Drain-source on-state resistance R =f =0. =10 V DS(on % -60 - [° Typ. capacitances C =f ...
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Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.5 14 Drain-source breakdown voltage V BR(DSS) 70 ...
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Package Outline: Footprint: Rev. 2.5 Packaging: page 8 BSS138N 2006-05-17 ...
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