IPI80N04S3-03 Infineon Technologies, IPI80N04S3-03 Datasheet - Page 4

• Manufacturer Part Number: IPI80N04S3-03
• Description: MOSFET N-CH 40V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 120µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 188W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261238

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
200
180
160
140
120
100
100
80
60
40
20
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0; SMD
≥ 6 V
50
1
T
V
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
100
10
10
10
= f(t
10
10
80
60
40
20
0
-1
-2
-3
1
0
C
10
); V
0
p
-6
0.5
0.1
0.05
0.01
)
single pulse
GS
10
≥ 6 V
p
IPI80N04S3-03, IPP80N04S3-03
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB80N04S3-03
10
-2
150
10
2007-05-03
-1
200
10
0