IPP80N04S3-03 Infineon Technologies, IPP80N04S3-03 Datasheet - Page 7

• Manufacturer Part Number: IPP80N04S3-03
• Description: MOSFET N-CH 40V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 120µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 188W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261229

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
2500
2000
1500
1000
500
12
10
8
6
4
2
0
0
0
25
j
)
gate
80 A
20 A
40 A
D
); I
DD
D
20
= 80 A pulsed
75
40
Q
gate
T
j
[°C]
[nC]
60
125
8 V
80
32 V
100
175
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
55
50
45
40
35
30
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
IPI80N04S3-03, IPP80N04S3-03
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
g d
IPB80N04S3-03
100
140
2007-05-03
Q
gate
180