IPW60R125C6 Infineon Technologies, IPW60R125C6 Datasheet - Page 8

• Manufacturer Part Number: IPW60R125C6
• Description: MOSFET N-CH 600V 30A TO247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R125C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 3.5V @ 960µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 2127pF @ 100V
• Power - Max: 219W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.11ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant