IRFZ44S Vishay, IRFZ44S Datasheet

MOSFET N-CH 60V 50A D2PAK

IRFZ44S

Manufacturer Part Number
IRFZ44S
Description
MOSFET N-CH 60V 50A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFZ44S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ44S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ44S
Manufacturer:
IR
Quantity:
25 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Calculated continuous current based on maximum allowable junction temperature.
f. Uses IRFZ44, SiHFZ44 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91293
S10-2476-Rev. B, 01-Nov-10
I
2
PAK
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 51 A, dI/dt  250 A/μs, V
(TO-262)
= 25 V; starting T
()
G
D
S
G
D
a, e
f
J
f
2
D
= 25 °C, L = 44 μH, R
PAK (TO-263)
S
e
c, f
DD
b
 V
V
GS
DS
= 10 V
, T
D
SiHFZ44S-GE3
IRFZ44SPbF
SiHFZ44S-E3
IRFZ44S
SiHFZ44S
J
2
G
PAK (TO-263)
 175 °C.
g
Single
N-Channel MOSFET
= 25 , I
60
67
18
25
d
C
)
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
AS
0.028
V
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
= 51 A (see fig. 12).
GS
at 10 V
T
T
A
C
for 10 s
D
SiHFZ44STRR-GE3
IRFZ44STRRPbF
SiHFZ44STR-E3
IRFZ44STRR
SiHFZ44STR
= 25 °C
= 25 °C
2
PAK (TO-263)
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Advanced Process Technology
• Surface Mount (IRFZ44S, SiHFZ44S)
• Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ44L, SiHFZ44L) is available
for low profile applications.
Definition
a
a
2
a
PAK is a surface mount power package capable of
a
a
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
DM
I
GS
DS
AS
D
D
D
SiHFZ44STRL-GE3
IRFZ44STRLPbF
SiHFZ44STL-E3
IRFZ44STRL
SiHFZ44STL
stg
2
PAK (TO-263)
a
a
- 55 to + 175
a
a
LIMIT
± 20
200
100
150
300
a
1.0
3.7
4.5
60
50
36
Vishay Siliconix
I
IRFZ44LPbF
SiHFZ44L-E3
IRFZ44L
SiHFZ44L
2
PAK (TO-262)
www.vishay.com
-
UNIT
W/°C
V/ns
2
mJ
°C
W
PAK is
V
A
1

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IRFZ44S Summary of contents

Page 1

... IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition 60 • Advanced Process Technology 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 67 • 175 °C Operating Temperature 18 • Fast Switching 25 • Compliant to RoHS Directive 2002/95/EC ...

Page 2

... IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, steady-state) Maximum Junction-to-Case Note a. When mounted on 1” square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91293 S10-2476-Rev. B, 01-Nov-10 IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ’ Fig Maximum Safe Operating Area Document Number: 91293 S10-2476-Rev. B, 01-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91293 S10-2476-Rev. B, 01-Nov-10 IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix V DS Vary t to obtain p required D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91293. Document Number: 91293 S10-2476-Rev. B, 01-Nov-10 IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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