IRFR4105 International Rectifier, IRFR4105 Datasheet - Page 5

• Manufacturer Part Number: IRFR4105
• Description: MOSFET N-CH 55V 27A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR4105

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR4105

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0.01
30
25
20
15
10
0.1
10
0.00001
5
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
Case Temperature
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
125
t , Rectangular Pulse Duration (sec)
1
°
150
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
R
d(on)
Pulse Width
Duty Factor
G
5.0V
V
GS
J
t
r
0.01
V
DM
DS
x Z
µs
1
thJC
P
2
DM
+ T
D.U.T.
IRFR/U4105
C
t
t
d(off)
1
R
D
t
2
t
f
0.1
+
-
V
DD
5