IRF7807VD1 International Rectifier, IRF7807VD1 Datasheet - Page 5

• Manufacturer Part Number: IRF7807VD1
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7807VD1

Fig 7. Typical Reverse Output Characteristics
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60
50
40
30
20
10
0
2.0
1.5
1.0
0.5
0.0
0
TOP
BOTTOM 0.0V
-60 -40 -20
Fig 5. Normalized On-Resistance
I =
D
V SD , Source-to-Drain Voltage (V)
0.2
7.0A
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
T , Junction Temperature ( C)
J
Vs. Temperature
0
0.4
20 40 60
380µs PULSE WIDTH
Tj = 25°C
0.6
80 100 120 140 160
0.8
0.0V
V
°
GS
=
4.5V
1
Fig 8. Typical Reverse Output Characteristics
0.030
0.025
0.020
0.015
0.010
70
60
50
40
30
20
10
0
Fig 7. On-Resistance Vs. Gate Voltage
2.0
0
TOP
BOTTOM 0.0V
4.0
V GS, Gate -to -Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
0.2
VGS
4.5V
6.0
3.5V
3.0V
2.5V
2.0V
IRF7807VD1
0.4
8.0
0.0V
I D = 7.0A
10.0
380µS PULSE WIDTH
Tj = 150°C
0.6
12.0
0.8
14.0
16.0
5
1