IRF7476 International Rectifier, IRF7476 Datasheet - Page 2

• Manufacturer Part Number: IRF7476
• Description: MOSFET N-CH 12V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7476

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.9V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2550pF @ 6V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7476; Q1332195

Avalanche Characteristics
Diode Characteristics
Dynamic @ T
IRF7476
Static @ T
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
V
R
V
AR
I
SM
S
rr
rr
I
d(on)
r
d(off)
f
DSS
AS
V
GSS
fs
SD
iss
oss
rss
(BR)DSS
GS(th)
g
gs
gd
oss
rr
rr
DS(on)
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
0.6
31
–––
–––
––– 0.87
––– 0.73 –––
–––
–––
–––
–––
12
2550 –––
2190 –––
0.014
–––
–––
–––
450
–––
–––
–––
–––
–––
––– -200
4.6
8.3
6.0
26
11
17
11
29
19
55
59
54
60
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
250
200
1.2
82
89
81
90
1.9
40
2.5
120
––– V/°C
8.0
30
m
nC
nC
nC
ns
pF
ns
ns
µA
nA
S
V
Typ.
A
V
V
–––
–––
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
Reference to 25°C, I
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
D
D
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
G
= 12A
= 12A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= 10V
= 6.0V, I
= 4.5V
= 0V, V
= 6.0V
= 4.5V
= 0V
= 6.0V
= V
= 9.6V, V
= 9.6V, V
= 0V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
GS
, I
D
S
F
ƒ
DS
D
Conditions
D
S
F
D
D
= 250µA
Conditions
= 12A, V
= 12A, V
Conditions
GS
GS
= 250µA
= 12A, V
= 12A, V
= 12A
= 5.0V
= 15A
= 12A
Max.
160
12
ƒ
ƒ
= 0V
= 0V, T
D
www.irf.com
GS
R
= 1mA
=12V
R
ƒ
ƒ
GS
J
=12V
= 0V
G
= 125°C
= 0V
Units
mJ
ƒ
A
ƒ
D
S