IRF530 STMicroelectronics, IRF530 Datasheet - Page 3

• Manufacturer Part Number: IRF530
• Description: MOSFET N-CH 100V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of IRF530

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 458pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2780-5

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
Q
d(on)
Q
d(off)
SD
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
(*)
( )
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 14 A
= 14 A
= 50 V
= 80V I
= 50 V
= 10V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 14A V
Thermal Impedance
di/dt = 100A/µs
V
V
GS
T
GS
j
V
I
= 150°C
D
= 10 V
GS
I
D
GS
= 7 A
= 0
= 7 A
= 10 V
= 10V
Min.
Min.
Min.
Typ.
Typ.
Typ.
230
3.7
4.7
16
25
16
32
92
8
5
Max.
Max.
Max.
1.6
21
14
56
IRF530
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/8