IRF740 STMicroelectronics, IRF740 Datasheet - Page 5

• Manufacturer Part Number: IRF740
• Description: MOSFET N-CH 400V 10A TO-220
• Manufacturer: STMicroelectronics

Specifications of IRF740

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2931-5

IRF740
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 12)
SD
SD
DD
=10A, V
=10A,
Test conditions
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Typ.
370
3.2
17
Max
1.6
10
40
Unit
µC
ns
A
A
V
A
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