STP8NM60 STMicroelectronics, STP8NM60 Datasheet - Page 4

• Manufacturer Part Number: STP8NM60
• Description: MOSFET N-CH 650V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP8NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5397-5; STP8NM60

Electrical characteristics
4/18
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
t
V
SDM
t
t
r(Voff)
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
t
t
c
r
f
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100 A/µs,
(see Figure 22)
I
di/dt = 100 A/µs,
Tj=150 °C
V
R
(see Figure 17)
V
R
SD
SD
SD
DD
DD
G
G
= 4.7 Ω, V
= 4.7 Ω, V
= 5A, V
= 5 A, V
= 5 A, V
= 300 V, I
= 480 V, I
Test conditions
Test conditions
(see Figure 22)
GS
DD
DD
GS
GS
D
D
=0
STP8NM60, STD5NM60, STB8NM60
=100 V
= 2.5 A,
= 5 A,
= 100 V
=10 V
=10 V
Min.
Min.
Typ.
1.95
3.00
13.5
Typ.
300
445
13
14
10
23
10
10
17
7
Max.
Max.
1.5
32
8
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A