IPP80N06S3L-06 Infineon Technologies, IPP80N06S3L-06 Datasheet - Page 5

• Manufacturer Part Number: IPP80N06S3L-06
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 80µA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 9417pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L06X; IPP80N06S3L06XK; SP000088006

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
160
140
120
100
80
60
40
20
160
140
120
100
0
80
60
40
20
DS
GS
0
0
); T
); V
0
GS
j
j
DS
= 25 °C
10 V
1
= 4 V
1
2
2
V
V
GS
DS
3
3
[V]
[V]
4
4
-55 °C
25 °C
5
5
5 V
4.5 V
4 V
3.5 V
3 V
175 °C
6
page 5
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
14
12
10
10
8
6
4
2
0
8
6
4
2
= f(I
= f(T
-60
0
D
j
); T
); I
GS
IPI80N06S3L-06, IPP80N06S3L-06
-20
D
j
= 25 °C
= 80 A; V
50
20
GS
T
I
D
j
60
= 10 V
[°C]
[A]
10 V
6 V
8 V
5 V
IPB80N06S3L-06
100
100
140
2007-11-07
150
180