NTB45N06G ON Semiconductor, NTB45N06G Datasheet

NTB45N06G

Manufacturer Part Number

NTB45N06G

Description

MOSFET N-CH 60V 45A D2PAK

Manufacturer

ON Semiconductor

Datasheet

1.NTP45N06.pdf (7 pages)

Specifications of NTB45N06G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

26 mOhm @ 22.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

45A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

46nC @ 10V

Input Capacitance (ciss) @ Vds

1725pF @ 25V

Power - Max

2.4W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.026 Ohms

Forward Transconductance Gfs (max / Min)

16.6 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

45 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTB45N06G
NTB45N06GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB45N06G

Manufacturer:

Quantity:

140

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB45N06G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTB45N06G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
Download datasheet (82Kb)

NTP45N06, NTB45N06

Power MOSFET

45 Amps, 60 Volts

N−Channel TO−220 and D

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Typical Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended

MAXIMUM RATINGS

August, 2005 − Rev. 1

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Derate above 25°C

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

L(pk)

Designed for low voltage, high speed switching applications in

Higher Current Rating

Lower R

Lower V

Lower Capacitances

Lower Total Gate Charge

Tighter V

Lower Diode Reverse Recovery Time

Lower Reverse Recovery Stored Charge

Pb−Free Packages are Available

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

pad size, (Cu Area 0.412 in

= 40 A, L = 0.3 mH, V

= 50 Vdc, V

− Continuous

− Non−Repetitive (t

DS(on)

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Specification

− Continuous @ T

− Single Pulse (t

Rating

= 10 Vdc, RG = 25 W,

= 25°C

= 25°C unless otherwise noted)

= 10 MW)

= 25°C

= 25°C (Note 1)

= 25°C (Note 2)

v10 ms)

= 60 Vdc)

v10 ms)

= 25°C

= 100°C

PAK

Symbol

DGR

, T

DSS

qJC

qJA

stg

−55 to

Value

+175

"20

"30

0.83

46.8

63.2

150

125

240

260

3.2

2.4

1.2

W/°C

°C/W

Unit

Vdc

Adc

Apk

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

NTx45N06G

AYWW

45 AMPERES, 60 VOLTS

Drain

NTx45N06

ORDERING INFORMATION

CASE 221A

MARKING DIAGRAMS

TO−220AB

& PIN ASSIGNMENTS

STYLE 5

http://onsemi.com

DS(on)

Source

N−Channel

= Device Code

= B or P

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Publication Order Number:

= 26 mW

Gate

NTx

45N06G

AYWW

Drain

NTP45N06/D

CASE 418B

STYLE 2

PAK

Source

Related parts for NTB45N06G

NTB45N06G Summary of contents

Page 1

NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Higher Current Rating • Lower R DS(on) ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTP45N06 NTP45N06G NTB45N06 NTB45N06G NTB45N06T4 NTB45N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP45N06, NTB45N06 (T = 25° ...

Page 3

7 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...

Page 4

3200 C iss 2800 C 2400 rss 2000 1600 1200 800 400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. ...

Page 5

Normalized Steady State qJC 0.1 0.01 0.00001 0.0001 10 Normalized Steady State, qJA 1″ square Cu Pad, Cu Area 1.127 inch FR4 board 1 0.1 0.01 0.001 0.00001 0.0001 ...

Page 6

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP45N06, NTB45N06 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 7

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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