NTD4809N-1G ON Semiconductor, NTD4809N-1G Datasheet - Page 4

• Manufacturer Part Number: NTD4809N-1G
• Description: MOSFET N-CH 30V 9A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4809N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1456pF @ 12V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 m Ohms
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
120
100
110
90
80
70
60
50
40
30
20
10
2.0
1.5
1.0
0.5
0
--50
0
0
3
6.5 V
7 V
I
V
Figure 3. On- -Resistance vs. Gate- -to- -Source
D
GS
--25
V
= 30 A
DS
V
Figure 1. On- -Region Characteristics
Figure 5. On- -Resistance Variation with
= 10 V
GS
4
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
1
, GATE--TO--SOURCE VOLTAGE (VOLTS)
T
J
0
, JUNCTION TEMPERATURE (°C)
5
25
2
Temperature
6
50
Voltage
6 V
5.5 V
75
7
3
TYPICAL PERFORMANCE CURVES
100
8
T
125
J
4
= 25°C
I
T
D
J
= 30 A
= 25°C
http://onsemi.com
9
150
4.5 V
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
5 V
4 V
175
5
10
4
100,000
10,000
0.020
0.015
0.010
0.005
1000
100
120
100
10
80
60
40
20
0
0
10
5
0
Figure 4. On- -Resistance vs. Drain Current and
V
T
V
Figure 6. Drain- -to- -Source Leakage Current
GS
J
DS
15
V
= 25°C
V
DS
= 0 V
≥ 10 V
GS
Figure 2. Transfer Characteristics
1
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
20
10
I
D
, DRAIN CURRENT (AMPS)
25
T
J
vs. Drain Voltage
2
= 25°C
Gate Voltage
T
30
J
T
T
V
V
J
J
= 125°C
GS
GS
= 175°C
= 125°C
15
35
3
= 11.5 V
= 4.5 V
40
T
J
= --55°C
4
45
20
50
5
55
60
25
6