BAP64-05W,115 NXP Semiconductors, BAP64-05W,115 Datasheet - Page 3

• Manufacturer Part Number: BAP64-05W,115
• Description: DIODE PIN 100V 100MA SOT-323
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP64-05W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 100V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 100 V
• Forward Continuous Current: 100 mA
• Frequency Range: 3 GHz
• Termination Style: SMD/SMT
• Carrier Life: 1.55 us
• Forward Voltage Drop: 0.95 V
• Maximum Diode Capacitance: 0.52 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.7 Ohms
• Maximum Series Resistance @ Minimum If: 20 Ohms
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.55us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1934-2; 934056232115; BAP64-05W T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2000 Jul 13
Per diode
V
I
C
r

L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
Silicon PIN diode
d
th j-s
forward voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
V
V
V
I
I
I
I
when switched from I
I
I
F
F
F
F
F
R
R
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz; note 1
= 6 mA; R
= 3 mA
= 100 V
= 20 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
3
CONDITIONS
L
= 100 ; measured at
F
= 10 mA to
0.95


0.52
0.37
0.23
20
10
2
0.7
1.55
1.2
TYP.
VALUE
BAP64-05W
250
Product specification
1.1
10
1


0.35
40
20
3.8
1.35


MAX.
UNIT
K/W
V
A
A
pF
pF
pF




s
nH
UNIT